2009. 11. 9 1/2 semiconductor technical data KMB035N40DB n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for back-light inverter and power supply. features h v dss =40v, i d =35a. h low drain to source on-state resistance. : r ds(on) =12.0m ? (max.) @ v gs =10v : r ds(on) =17.0m ? (max.) @ v gs =4.5v maximum rating ( ta=25? unless otherwise noted ) pin connection (top view) dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o max 0.1 n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o note 1) r thjc means that the infinite heat sink is mounted. note 2) surface mounted on 1 ? 1 pad of 2 oz copper. characteristic symbol n-ch unit drain to source voltage v dss 40 v gate to source voltage v gss ? 20 v drain current dc@t c =25 ? (note1) i d 35 a pulsed (note2) i dp 140 drain power dissipation @t c =25 ? (note1) p d 43 w @ta=25 ? (note2) 3.1 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to case (note1) r thjc 2.9 ? /w thermal resistance, junction to ambient (note2) r thja 40 ? /w * weight : 0.33g(typ)
2009. 11. 9 2/2 KMB035N40DB revision no : 1 electrical characteristics ( ta=25? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 1 a gate to source leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.7 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =18a (note3) - 8.0 12.0 m ? v gs =4.5v, i d =16a (note3) - 13.0 17.0 forward transconductance g fs v ds =5v, i d =18a (note3) - 48 - s dynamic input capacitance c iss v ds =20v, f=1mhz, v gs =0v - 970 - pf ouput capacitance c oss - 205 - reverse transfer capacitance c rss - 100 - gate resistance r g f=1mhz - 2.9 - ? total gate charge v gs =10v q g v ds =20v, v gs =10v, i d =18a (note3) - 20.2 - nc v gs =5v q g - 10.7 - gate to source charge q gs - 5.1 - gate to drain charge q gd - 4.6 - turn-on delay time t d(on) v dd =20v, v gs =10v i d =18a, r g =6 ? (note3) - 18 - ns turn-on rise time t r - 17 - turn-off delay time t d(off) - 55 - turn-off fall time t f - 13 - source-drain diode ratings continuous source current i s - - 35 - a pulsed source current i sp - - 140 - a source to drain forward voltage v sd v gs =0v, i s =3a (note3) - 0.8 1.2 v reverse recovery time t rr i s =18a, di/dt=100a/ s - 24 - ns reverse recovered charge q rr i s =18a, di/dt=100a/ s - 8.8 - nc note3) pulse test : pulse width <300 k , duty cycle < 2%
2009. 11. 9 3/4 KMB035N40DB revision no : 1
2009. 11. 9 4/4 KMB035N40DB revision no : 1
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